ACE2302 mosfet equivalent, n-channel enhancement mode mosfet.
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20V/3.6A, RDS(ON)=80mΩ@VGS=4.5V 20V/3.1A, RDS(ON)=95mΩ@VGS=2.5V Super high density cell design for ext.
N-Channel Enhancement Mode MOSFET
The ACE2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state.
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